| PART |
Description |
Maker |
| HYB3164405TL-50 HYB3164405T-50 SIEMENSAG-HYB316540 |
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO34
|
SIEMENS AG
|
| PD42S17405L |
16M- bit CMOS dynamic RAMs(16M CMOS 动态RAM) 1,600位CMOS动态存储器,600的CMOS动态内存）
|
NEC, Corp.
|
| MC-45V16AD641 MC-45V16AD641EF-A10 MC-45V16AD641EF- |
16M-WORD BY 64-BIT VirtualChannel SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE 1,60064位VirtualChannel同步动态RAM模块无缓冲型
16M-WORD BY 64-BIT VirtualChannel SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE 1,6004VirtualChannel同步动态RAM模块无缓冲型
16M-WORD BY 64-BIT VirtualChannel SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE 1,6004位VirtualChannel同步动态RAM模块无缓冲型
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| GM71CS17403C GM71CS17403C-5 GM71CS17403C-6 GM71CS1 |
LED T5.5 24V12.5MA RED RoHS Compliant: Yes
4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor Inc.
|
| UPD42S17405LA-60 UPD4217405LA-50 |
16M-BIT DYNAMIC RAM
|
NEC
|
| K4F640412D K4F660412D |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode
|
SAMSUNG[Samsung semiconductor]
|
| HYB3164405L-60 HYB3164405L-50 HYB3164405T-60 HYB31 |
16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-version)
|
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| MC-4516CB646EF-A10 MC-4516CB646EF-A80 MC-4516CB646 |
16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 DIMM-168
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
NEC, Corp.
NEC Corp.
|
| MC-4516CD641XS-A10 MC-4516CD641XS-A80 |
16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144 SOCKET TYPE, SODIMM-144
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
|
Elpida Memory, Inc.
|
| GM71V18163C GM71V18163C-5 GM71V18163C-6 GM71V18163 |
1M words x 16 bit CMOS dynamic RAM, 3.3V, 60ns
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor
|
| MC-45V16AB642KF-A75 |
16M-WORD BY 64-BIT VirtualChannel DYNAMIC RAM MODULE UNBUFFERED TYPE
|
Elpida Memory
|
